ESDA6V8UIB 2-line, ultra-low-capacitor, uni-directional transient voltage suppressors descriptions the ESDA6V8UIB is a transient voltage suppressors (tvs) which provide a very high level protection for sensitive electronic components that may be subjected to electrostatic discharge (esd). it is designed to replace multilayer varistors (mlv) in consumer equipments applications such as mobile phone, notebook, pad, stb, lcd tv etc. the ESDA6V8UIB was past esd transient voltage up to 10kv (contact) according to iec61000-4-2 and withstand peak current up to 3a for 8/20us pulse according to iec61000-4-5. the ESDA6V8UIB is available in dfn1.45*1.0 package. standard products are pb-free and halogen-free. features ? working voltage : 5v ? peak power (tp=8/20us) : 48w ? esd protection iec61000-4-2 (contact) : 10kv iec61000-4-2 (air) : 15kv ? low leakage current ? small package applications ? mobile phone ? pad ? notebook ? stb ? lcd tv ? digital camera ? other electronics equipments dfn1.45*1.0 pin configuration (top view) dfn1.45*1.0 ** = week (00~52) i = device code marking order information device package shipping ESDA6V8UIB-6/tr dfn1.45*1.0 3000/tape&reel i ** 4 5 6 1 2 3 gnd i/o1 i/o2 nc nc nc 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings electronics characteristics (ta=25 o c, unless otherwise noted) 8/20us waveform iec61000-4-2 waveform parameter symbol rating unit peak pulse power (tp=8/20us) ppk 48 w peak pulse current (tp=8/20us) ipp 3 a esd voltage iec61000-4-2 air v esd 15 kv esd voltage iec61000-4-2 contact 10 junction temperature t j 125 o c operating temperature t op -40~85 o c lead temperature t l 260 o c storage temperature t stg -55~150 o c parameter symbol condition min. typ. max. unit reveres maximum working voltage v rwm 5.0 v reveres leakage current i r v rwm =5v 1.0 ua reveres breakdown voltage v br i t =1ma 6.5 8.0 9.5 v forward voltage v f i f =10ma -0.4 -0.8 -1.4 v clamping voltage v c ipp=1a tp=8/20us 12 v ipp=3a tp=8/20us 16 v junction capacitance (i/o to gnd) c j f ac =1mhz, v r =0v 0.9 1.2 pf junction capacitance (i/o to i/o) c j f ac =1mhz, v r =0v 0.45 0.6 pf t 60ns 30ns tr=0.7~1ns 10 90 100 peak pulse current (%) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 duration=20us front times=1.25*( t90-t10) =8us peak pulse current (%) peak pulse time (us) ESDA6V8UIB 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
t ypical characteristics (ta=25 o c, unless otherwise noted) clamping voltage vs. peak pulse current non-repetitive peak pulse power vs. pulse time esd clamping (iec61000-4-2 +8kv contact) capacitance vs. reveres voltage power derating vs. temperature esd clamping (iec61000-4-2 -8kv contact) 01234 0 4 8 12 16 20 pulse waveform: tp=8/20us v c - clamping voltage (v) ipp - peak pulse current (a) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse duration(us) 012345 0.4 0.6 0.8 1.0 1.2 1.4 f signal =1mhz v signal =50mvrms c - junction capacitance (pf) v r - reverse voltage (v) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) ESDA6V8UIB 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn1.45*1.0 symbol dimensions in millimeter min. typ. max. a 0.500 - 0.600 a1 0.010 - 0.050 a3 0.120ref d 1.374 1.526 e 0.924 1.076 k 0.200min b 0.150 0.250 e 0.500typ l 0.250 0.350 l1 0.300 0.400 l2 0.000 0.100 ESDA6V8UIB 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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